| 摘要 |
PURPOSE:To form a stabilized antistatic layer and an external electromagnetic wave shielding layer by a method wherein the surface layer part of polyacetylene, which is the organic high molecular polymer formed in such a manner that it covers the active region surface of a semiconductor chip, is brought into the state of high conductivity, thereby enabling to prevent the short-circuit generating in a semiconductor device. CONSTITUTION:Polyacetylene (CH)x is polymerized by performing a Ziegler- Natta catalyzer or triethyl aluminum [Al(C2H5)3]-tetrabutoxy titanium [Ti(OC4 H9)4], by setting Al/Ti ratio at 4 in molar ratio, by applying the above on the active region of a semiconductor chip, and by introducing acetylene (CH2=CH2) gas at the pressure of 500-600mm.Hg for 10min in vacuum atmosphere. The polymerized polyacetylene (CH)x has the property of an insulating film. Then, the residual catalyzer is cleaned by toluene, hexane and the like, and the polyacetylene (CH)x of approximately 50mum in thickness is completed. Then, arsenic pentafluoride is introduced at the pressure of 0.5Torr under vacuum and at room temperature, and the polyscetylene (CH)x is brought into the state of high conductivity to the depth of approximately 20mum having the specific conductance of 1X10<3>S/cm. |
