| 摘要 |
PURPOSE:To realize the excellent characteristics by means by implanting silicon thin film with hydrogen subject to excellent controllability and reproducibility as well as processing capacity by a method wherein a gate electrode is formed and then a silicon thin film formed on the gate electrode is implanted with hydrogen atoms by means of ion implanting process. CONSTITUTION:A silicon thin film 103 such as polycrystalline silicon, amorphous silicon etc. is deposited on an insulating substrate 101 to form specified pattern and then an insulating film 103 is formed by thermal oxidation, vapor growth processes etc. Next after forming a gate electrode 104, the silicon film 102 is implanted with penta-impurity ion 105 to be a doner such as phosphorus or arsenic to form a source region 106 and a drain region 107. Then the silicon thin film 102 is further implanted with hydrogen ion 108 through the intermediary of the gate electrode 104 and the gate insulating film 103. Finally after depositing an interlayer insulating film 109, a contact hole may be opened to form a source electrode 110 and a drain electrode 111. |
