| 摘要 |
A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy technique whereby the spacing between respective melt-containing chambers and respective substrate-receiving recesses are substantially equal to one another and, during the deposition stage, the temperature of all melts located on respective substrates is lowered a substantially identical amount so that a corresponding epitaxial layer grows on each such substrate. |
