| 摘要 |
PURPOSE:To single-crystallize the desired region of a semiconductor by a method wherein polysilicon is formed by irradiating linear heating radiant rays from the upper surface of a polycrystalline semiconductor layer, the position of the above irradiation is shifted in a scanning manner, a radiant ray reflecting layer is provided at a part of the semiconductor layer, and a desired heat distribution is formed. CONSTITUTION:A thermal oxide film 3, polysilicon 4, SiO2 5 and Si3N4 6 are superposed on an Si single crystal substrate 2, an Mo layer 10 is provided, and an SiO2 film 11 and an Si3N4 film 12 are covered thereon. The light L of a linearly condensed Xe arc lamp is made to irradiate on a sample 1a, polysilicon 4 is fused, and a fusion band 9 corresponding to the focussing width of the light L is formed. In the region where Mo 10 is present, the light L is reflected and Mo is fused in a narrow region only. Accordingly, the recrystallization generating due to solidification is started from said narrow region, crystal growth is also started from the lower layer of the Mo 10, and the crystal is continuously grown following the scanning of light forming a crystal grain boundary, thereby enabling to obtain a large area of single crystal Si layer. |
