Lateral bipolar transistor and method of producing the same.

摘要

57 A lateral bipolar transistor affording a good controllability for a base length is disclosed.

In fabricating a lateral bipolar transistor by forming a single crystal column (15) and disposing heavily doped polycrystalline regions (21E,21C) on both sides of the column (15). contact surfaces between the single crystal column (15) and the heavily doped polycrystalline regions (21E,21C) are controlled by etching of an oxide film (61). The etching of the oxide film (61) can provide a device of a precision higher than attained by controlling any other element.