| 摘要 |
Chemical polishing apparatus comprises a ring (7) for mounting above a polishing pad (1). A holder (6) is mounted in liquid e.g. etchant, or gas e.g. air bearings (11, 12, 14) in the ring (7) and carries substrates (4) for polishing. Polishing etchant is supplied by a pipe (3). The pad (2) may be held stationary and is rotated on a table (1). A liquid e.g. etchant or gas e.g. air turbine (14, 15, 16) rotates the holder (6). Vertical positioning of the holder (6) in the ring (7) is determined by the rate of liquid or gas flow to the bearing (12). Prior to chemical polishing the substrate (4) may be mechanically polished in an abrasive slurry. <IMAGE>
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