| 摘要 |
PURPOSE:To realize a very fine resistance layer by a method wherein a polycrystalline Si resistance layer is formed after a prescribed pattern on an Si substrate with the intermediary of an SiO2 film, SiO2 films divergent in shape are attached to both ends of the resistance layer, and Al electrodes are built in contact with the resistance layer and SiO2 films. CONSTITUTION:The surface of an Si substrate 11 is converted into an SiO2 film 12 in a heat treatment and, thereon, a polycrystalline Si resistance layer 13 is formed after a prescribed pattern. Al-made electrodes 15 are attached to both ends of the resistance layer 13. The exposed portion of the layer 13 is coated by an SiO2 film 14 formed by the CVD method, subjected to reactive ion etching for the provision of openings at locations in the film 14 for electrodes 15. SiO2 films 14' divergent in shape are retained at the sides of the resistance layers 13. The Al electrodes 15 are provided in the openings, covering the layer 13 and film 14'. With the device constructed as such, an electrode 15 creates but a gentle slope. The electrodes 15 do not directly contact the resistance layer 13, which eliminates reaction between the two. |
