| 摘要 |
PURPOSE:To form a MOS semiconductor having the low resistance of source- drain without generating a short channel effect by forming high-concentration impurity adding regions, in which the source-drain are shaped, on a substrate to which a gate insulating film and a gate electrode are formed. CONSTITUTION:A LOCOS oxide film 2 as an inter-element isolation region is shaped on a P type silicon substrate 1. A gate oxide film 5 is formed in an element forming region (d), and B<+> ions are implanted from the upper section of the oxide film 5 to shape a P<-> layer. Polycrystalline silicon to which P is doped is formed. A gate electrode 4 is formed through etching, and the gate oxide film 5 is further removed through etching. An oxide film 6 is shaped on the surface of the polycrystalline silicon. An oxide film 7 is grown at that time. The oxide as the surface is etched to remove the oxide film 7. Silicon layers 8 in B concentration are grown to sections to which a source and a drain are shaped. Lastly, an epitaxial layer 9 is grown. |
