| 摘要 |
PURPOSE:To reduce a multiple interference of light in a resist film, and to eliminate the change of the exposure to the photo resist by a method wherein a light transmitting type reflection checking film is formed on the photo resist film. CONSTITUTION:A photo resist 42 is formed on a substrate 41. A reflection checking film 43 is applied to be formed on the resist 42. Exposure to light is performed using light of 436nm wavelength through a mask 44. The exposure is changed by every shot to perform PQC (Process Quality Control). The checking film 43 is removed using xylene. Development is performed to form a photo resist pattern 42' on the substrate 41. By performing measurement of size of the photo resist pattern, or measurement of the minimum exposure resolvable by the resist pattern, etc., PQC is performed. |
