| 摘要 |
PURPOSE:To increase the rate of the deposition of metal by the reduction of metallic ions by immersing a substrate supporting a photocatalyst layer and an oxidation catalyst layer in a soln. contg. metallic ions, adding an electron donor, and irradiating light. CONSTITUTION:A photocatalyst layer 3 contg. a semiconductor substance such as TiO2 which is excited with visible light or ultraviolet light is formed on the surface of a glass substrate 2, and an oxidation catalyst layer 6 of RuO2 or the like is supported on a part of the layer 3. The substrate 2 is immersed in an aqueous soln. contg. metallic ions such as an aqueous CuSO4 soln. A water soluble electron donor such as methanol is added to the soln., and light having larger energy than energy required to excite the semiconductor substance is irradiated on the semiconductor substance from the catalyst layer side to deposit metallic copper on the layer 3. By this method the rate of the deposition of metal by the reduction of metallic ions can be increased. |
