| 摘要 |
PURPOSE:To obtain noncrystalline boron nitride having improved stability without damaging transparency, by synthesizing boron nitride by vapor-phase precipitation method, adding silicon nitride in a specific ratio to it. CONSTITUTION:Noncrystalline boron nitride synthesized by vapor-phase precipitation method, containing 0.05-15wt% silicon nitride. When an amount of silicon nitride exceeds 15wt%, improved processing properties of boron nitride of its own is damaged and it is unfavorable. When an amount of boron nitride less than 0.05wt%, the desired purpose can not be attained. BCl3, B2H6, B3N3H6 (borazine), etc. may be cited as the boron source compound used. N2, NH3, etc. may be cited as the nitrogen source compound. SiCl4, or SiH4 are used as the silicon source compound. In the case of a liquid raw material, it is vaporized by bubbling method using a carrier gas such as H2, etc.
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