| 摘要 |
PURPOSE:To highly integrate a semiconductor device and to increase the latchup strength by forming a single crystal semiconductor layer to become a channel region on an insulating substrate having a projection, and controlling the charge amount flowing a channel along the side wall of a hole with a gate electrode contacted with the channel. CONSTITUTION:A complementary insulated gate transistor (CMOS-FET) of this invention is formed in a so-called SOI structure that a single crystal layer 23 is grown on an insulating film 22. Particularly, since the shape of the insulating film is formed in a conical shape and the layer 23 of the side is used for a channel region, the size of the element can be reduced more as compared with an element which is merely planely formed. Since PMOS and NMOS formed at both left and right sides of the conical base are electrically separated by an insulating film 24 presented to surround the base, no latchup occurs. In the drawings, numeral 21 is a semiconductor substrate, numeral 25 is a gate electrode, numeral 26 is an interlayer insulating film, and numeral 27 is a metal electrode. |
