| 摘要 |
PURPOSE:To perform favorable development in spite of contamination of a developer by a method wherein a developing chamber is heated to vaporize the developer, and a wafer of substance to be treated is held at the voporizing temperature or less. CONSTITUTION:A developer 2 is put in the underside of a developing chamber 1. Moreover a heater part 3 is arranged at the lower part of the chamber 1, and the developer 2 is held at the vaporizing temperature or more. A cooling supporter 5 supporting a substrate 4 to be treated is supported inside of the chamber 1 according to an arm 6. When the vapor S of the developer comes in contact with the surface of a photo resist 7, the vapor becomes to liquid drops L to be adhered to the surface of the photo resist 7. Thereupon development is performed according to the liquid drops L. |
