| 摘要 |
PURPOSE:To enable Ta2O3 to have a larger selection ratio of etching rate to Si3N4 and SiO2 when an etching is performed on the Ta2O3 by a method wherein the Ta2O3 is performed a processing by discharge in boron trichloride or carbon tetrachloride-containing gas. CONSTITUTION:When etching is performed on Ta2O3 using a dry etching device, the Ta2O3 is performed an processing by discharge in boron trichloride or carbon tetrachloride-containing gas. Or, the Ta2O3 is performed a processing by discharge in gas containing boron trichloride, wherein freon of less than 32vol% has been mixed. Or, the Ta2O3 is performed a processing by discharge in gas containing carbonic gas tetrachloride, wherein oxygen of less than 50vol% has been mixed. As a result, the selectivity, which has not ever been obtained with reaction gas of the greon series, can be significantly improved. |
