| 摘要 |
PURPOSE:To prevent the generation of an undesirable crystal type and to obtain the SiC single crystal having the desired crystal type only by a method wherein an SiC single crystal layer of the crystal structure same as the main crystal structure having a low carrier density, is epitaxially grown on the main surface of the SiC single crystal body having the crystal structure other than the main crystal structure. CONSTITUTION:When a low density 6H-SiC single crystal 2 of 10mum or above, which is almost similar to i type having carrier density of 10<17>/cm<2> or below, is epitaxially grown on the SiC single crystal substrate 1 having the main crystal structure of 6H type and partially 15R type, the surface of the grown layer is developed into a perfect 6H type. Besides, an N-layer 3 and a P-layer 4 are successively formed by performing a widely known CVD growing method and a light-emitting diode having the P-N junction, with which highly efficient light emission will be accomplished, can be obtained. |
