| 摘要 |
PURPOSE:To provide the titled measurement with shorter measurement time than that of DLTS as well as with higher precision than that of the rectangular pulse impression process by a method wherein a semiconductor material with junction is supplied with stepwise changing pulses under the environment at optimum temperature and the resultant capacity changes are converted to calculate the charge density distribution of impurities at lower level. CONSTITUTION:The junction of a semiconductor to be measured is supplied with stepwise changing voltages. For example, firstly the junction is supplied with the reference voltage V0 till the time t1 and then supplied with the voltage V1 higher than the reference voltage V0 from the time t1 to the time t2 further with the original reference voltage V0 from the time t2 to the time t3 to measure each junction capacity during the impression of said voltages finishing the first measurement. Secondly the junction is supplied with the voltage V1 as the reference voltage from the time t3 to the time t4 and then with the voltage V2 higher than the voltage V1 from the time t4 to the time t5 further with the original reference voltage V1 from the time t5 to the time t6 to measure each junction capacity during the impression of said voltages finishing the second measurement. Moreover utilizing the voltage V2 as the reference voltage for the third measurement, said procedures may be repeated for the succeeding measurements. |
