| 摘要 |
PURPOSE:To decrease the occupied area of pattern layout by using a high resistance element as a feedback circuit for data storage. CONSTITUTION:A high resistance polycrystal silicon 11 is used as the feedback circuit for data storage. The sheet resistance is several Gohms/square - several tens of Gohms/square and a high resistance load is realized by a small area. When a clock input signal phi is at L in this case, a gate input signal of transistors (TR) 31, 32 is at L. A data output of L level is stored at a data output terminal 6 at this time. It is supposed that the signal phi goes to H and a data signal D of H level is inputted next. The pull-down by a TR41 and the pull-up by the signal D are made reciprocal, but since the resistance value of a feedback circuit 11 is sufficiently larger in comparison with the ON-resistance of the TR31, 32, the TR31 is turned on and the TR41 is turned off and H level is outputted from the terminal 6. When the gate signal of the TRs 31, 32 is at H, the level of the signal phi changes to H and when the signal D of L level is inputted, the L level is outputted from the terminal 6 similarly as above. |
