发明名称 |
Process for producing semiconductor wafers |
摘要 |
The invention relates to a process for producing silicon wafers from silicon rods (1), in which the silicon rod (1) is first provided on its lateral face with an at least partially circumferential notch (7) in a (111) plane. A thermal-shock treatment is then applied, in which inhomogeneous heating and cooling of the silicon rod (1) takes place, a silicon wafer (8) being cleaved off the silicon rod (1) as a result. <IMAGE>
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申请公布号 |
DE3403826(A1) |
申请公布日期 |
1985.08.08 |
申请号 |
DE19843403826 |
申请日期 |
1984.02.03 |
申请人 |
SIEMENS AG |
发明人 |
KELLER,WOLFGANG,DR.RER.NAT.;SCHNOELLER,MANFRED,DR.RER.NAT. |
分类号 |
B23K26/00;B28D1/22;B28D5/00;(IPC1-7):B28D5/00;H01L21/304 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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