发明名称 |
COMPOSITE OSCILLATOR OF PIEZOELECTRIC THIN FILM |
摘要 |
PURPOSE:To suppress spurious caused by a high frequency by reducing the size of a piezoelectric thin film less than the area of a diaphragm thin layer part and at the same time sticking an upper electrode to the entire vibrating part of the piezoelectric thin film. CONSTITUTION:A through-hole 21 is formed by an etching solution to a silicon substrate 22 having a (100) face on its surface with a CVD film formed on the rear side of the substrate 22 used as a mask. Then a lower electrode 26 is formed on a thin film 24 provided on the substrate surface, and a thin film 25 is formed on the electrode 26. Short-circuit electrodes 27 and 28 are formed outside a vibrating part in such a form that has an area where a short-circuit part is secured. Then the film 25 is removed at the area which is not covered with the electrode. In such a constitution, the dispersed frequency correspond to a resonance frequency for the input admittance characteristics. This can suppress effectively an in-hamonic overtone. |
申请公布号 |
JPS60149215(A) |
申请公布日期 |
1985.08.06 |
申请号 |
JP19830246765 |
申请日期 |
1983.12.29 |
申请人 |
NIPPON DENKI KK |
发明人 |
HOSHINO SHIGEKI;MIYASAKA YOUICHI |
分类号 |
H03H9/17;(IPC1-7):H03H9/17 |
主分类号 |
H03H9/17 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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