发明名称 COMPOSITE OSCILLATOR OF PIEZOELECTRIC THIN FILM
摘要 PURPOSE:To suppress spurious caused by a high frequency by reducing the size of a piezoelectric thin film less than the area of a diaphragm thin layer part and at the same time sticking an upper electrode to the entire vibrating part of the piezoelectric thin film. CONSTITUTION:A through-hole 21 is formed by an etching solution to a silicon substrate 22 having a (100) face on its surface with a CVD film formed on the rear side of the substrate 22 used as a mask. Then a lower electrode 26 is formed on a thin film 24 provided on the substrate surface, and a thin film 25 is formed on the electrode 26. Short-circuit electrodes 27 and 28 are formed outside a vibrating part in such a form that has an area where a short-circuit part is secured. Then the film 25 is removed at the area which is not covered with the electrode. In such a constitution, the dispersed frequency correspond to a resonance frequency for the input admittance characteristics. This can suppress effectively an in-hamonic overtone.
申请公布号 JPS60149215(A) 申请公布日期 1985.08.06
申请号 JP19830246765 申请日期 1983.12.29
申请人 NIPPON DENKI KK 发明人 HOSHINO SHIGEKI;MIYASAKA YOUICHI
分类号 H03H9/17;(IPC1-7):H03H9/17 主分类号 H03H9/17
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