| 摘要 |
PURPOSE:To contrive the reduction in leakage current and the improvement in withstand voltage by a method wherein an end of a gate electrode provided on an insulation film is formed by bending upward. CONSTITUTION:An SiO2 layer 2 and a layer to be made as the first conductor layer 3 are formed on a substrate 1, and an unnecessary part 3' of the layer 3 is removed. Next, the upper part 2' of the layer 2 is partly reduced by etching. Thereafter, an SiO2 film 6 is formed by thermally oxidizing the layer 3. Then, the second conductor layer 7 is formed on the layer 6. In this case, the degree of the push-up of the layer 3 end 4 and that of the extruding of the extrusion 8 of the layer 7 are related with the depth (t) of the layer 2 upper part removed by etching. Thereby, the titled device of small leakage current excellent in withstand voltage can be obtained. |
