发明名称 System and method for ion implantation with improved productivity and uniformity
摘要 A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.
申请公布号 US8502173(B2) 申请公布日期 2013.08.06
申请号 US201213625277 申请日期 2012.09.24
申请人 AXCELIS TECHNOLOGIES INC. 发明人 VANDERBERG BO H.;HAYS STEVEN C.;RAY ANDY
分类号 H01J37/317 主分类号 H01J37/317
代理机构 代理人
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