| 摘要 |
PURPOSE:To obtain a hole structure with a less occupied area in a semiconductor device by a method wherein the hole structure is made to have a contact hole, which exists in an active region having a reverse conductive type to that of the semiconductor substrate and has a depth deep enough to reach the substrate, and a metal wiring layer formed in such a way as to cover the upper part and side surface of the hole. CONSTITUTION:A contact hole 17 is shaped like a hole bored in a substrate 1 in a depth of about 1mum at this part, where the hole 17 itself is existing, for taking the potential of conductive regions 4' forming a source and the potential of the semiconductor substrate 1. An aluminum wiring layer is formed on the sidewall of the hole 17 and the regions 4' and the substrate 1 are mutually connected. However, at this time, as there is a possibility that a metal wiring 9 may be brought into a state of Schottky contact with the substrate 1 in some cases by the concentration of the P type substrate 1, it is better that a high-concentration region of P type impurities as indicated by A in the diagram has been previously formed by an ion-implantation technique, etc. As a result, the wiring 9 can be done with enough area to cover at least the hole 17 and any restriction due to the intervals between the wiring 9 and the neighboring wirings can be completely eliminated. |
