| 摘要 |
PURPOSE:To improve the withstand radiation property of a semiconductor integrated circuit by a method wherein element isolation regions are made with an excess silicon- containing insulating substance. CONSTITUTION:An etching is selectively performed on the surface of a substrate 101 using masking materials 103 for etching provided on the semiconductor substrate 101 respectively as a mask. P type impurities 105 are ion-implanted in the bottom parts of etched grooves 104 using the masking materials 103 respectively as a mask for performing an ion-implantation and channel stopper regions 106 are formed. After the masking materials 103 were removed, a silicon oxide film 107 is made to grow on the surface of the substrate 101. Insulating substance films 108 containing excess silicons having a large number of covalent bondings between insular silicon particles or silicon atoms are formed in only the etched grooves 104. According to this constitution, even though the insulating element isolation regions were irradiated with an ionizing radiation, a positive charge electrification scarcely generates in the substance films 108, because electron-hole pairs immediately recouple by excess silicons and annihilate. As a result, the withstand radiation property of the semiconductor integrated circuit is improved. |
