| 摘要 |
PURPOSE:To stabilize an oscillation mode, and to reduce the dispersion of mode characteristics by gradually making the shapes of the transverse sections of sections in the vicinity of both end surfaces of a current interrupting layer of a groove larger than the transverse section of an intermediate V-shaped section toward the end surfaces. CONSTITUTION:A striped groove 30 is formed so as to reach to the main surface section of a semiconductor substrate 1 from the surface of a layer 2 extending over one end surface opposed to the other end surface of a current interrupting layer 2 from the other end surface. The transverse surface of an intermediate section 30c except sections 30a, 30b in the vicinity of both end surfaces of the layer 2 of the groove 30 takes a V shape that side walls upward expend, the shapes of the transverse surfaces of the sections 30a, 30b in the vicinity of both end surfaces are made gradually larger than the shape of the transverse surface of the intermediate section 30c, and the depth of the sections 30a, 30b is made gradually deeper than that of the section 30c. Sections on the sections 30a, 30b of the groove 30 of an active layer 5 are curved downward, and a section on the section (c) is flattened. |
