| 摘要 |
PURPOSE:To form an electrode wiring, in which a resistance value and an interface level hardly change and increase, by coating the surface of the electrode wiring by a refractory metal with a nitride film. CONSTITUTION:A shield oxide film 2, source and drain diffusion regions 3, 4 and a gate SiO2 film 5 are formed to the surface of an Si substrate 1, and an silicon nitride film (Si3N4)6 shaped through heating at 1,000 deg.C in an ammonia atmosphere is formed on the surface of the gate SiO2 film. A gate electrode 7 consisting of a refractory metal, such as W, Mo, Ti, Ta, Nb or the like is shaped on the nitride film, and an Si3N4 film 8 through CVD is also formed on the surface on the gate electrode 7. |
