| 摘要 |
PURPOSE:To readily perform an etching having excellent uniformity by simultaneously etching the periphery of a wafer by surrounding with a dummy. CONSTITUTION:A ring 6 of the same material as a thin film 8 to be etched is placed to surround a wafer 1 having a photoresist pattern 9 and dry etched. At this time, the ring 6 may not, for example, have the photoresist pattern but is formed in the width of approx. 1/10 of the diameter 5 of the wafer 1, the gap 4 between the ring 6 and the wafer 1 is maintained 3mm. or lower, and the thickness is formed with the stepwise difference as less as possible. Thus, the radical of the surface of the wafer 1 and the density of the reactive product are averaged to improve the etching uniformity, thereby enhancing the speed and the frequency of a semiconductor integrated circuit by ready machining submicron gate having excellent dimensional accuracy. |
