发明名称 |
ELECTROPHOTOGRAPHIC SENSITIVE BODY |
摘要 |
PURPOSE:To provide high sensitivity at a short wevelength and high moisture resistance by forming further an amorphous silicon (a-Si:F) layer laminated to a specific film thickness on a conductive substrate. CONSTITUTION:Amorphous silicon (a-Si:H) contg. hydrogen is laminated to a prescribed thickness on a conductive substrate and gaseous fluorine having high purity is ionized in a vacuum and the ions are implanted to the a-Si:H layer to form the a-Si:F layer having a prescribed thickness. Since F has higher affinity to Si than H, the F implanted into the a-Si:H layer is bonded with Si to form an Si-F bond. The a-Si:F film having a high grade is thus formed and the electrophotographic sensitive body coated with the a-Si:F film having high moisture resistance is obte. The film thickness of the a-Si:F layer is preferably in a 0.1- 5mum range to obtain desired photosensitivity. Formation of the uniform film is difficult at <=0.1mum and the photosensitivity is deteriorated on the contrary if the thickness exceeds 5mum. |
申请公布号 |
JPS60144751(A) |
申请公布日期 |
1985.07.31 |
申请号 |
JP19840000438 |
申请日期 |
1984.01.05 |
申请人 |
HITACHI SEISAKUSHO KK |
发明人 |
TAMAHASHI KUNIHIRO;KONUMA SHIGEHARU;WAKAGI MASATOSHI;NARUSE MEGUMI;OONO TOSHIYUKI;HANAZONO MASANOBU |
分类号 |
G03G5/04;G03G5/08;H01L21/205;H01L21/265;H01L31/08 |
主分类号 |
G03G5/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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