| 摘要 |
PURPOSE:To increase the degree of integration by constituting a depletion-layer control type plasma coupling device so that the change of fundamental potential by conduction at one unit is detected as the change of gate threshold voltage in an adjacent unit element. CONSTITUTION:A depletion-layer control type plasma coupling device is constituted by an N type Si substrate 1, drains 2, emitters 3, sources 13 and gates 14. In the constitution, P or N type potential detecting electrodes 15 are formed in order to detect the potential of adjacent elements, and the electrodes 15 are connected to the gates 14. Consequently, the change of the potential of the peripheries of the adjacent unit elements are transmitted over the gates 14 with the ON-OFF of the adjacent unit elements. When shift pulse voltage is applied to the emitters 3 shaped in the vicinity of the gates 14 at that time, carriers are injected to the gates 14 from the emitters 3, only elements in which the OR is formed is turned ON, and carriers are transferred in succession. According to such a constitution, the structure of the unit elements is simplified, and the degree of integration can be increased. |
