发明名称 SCREENING METHOD OF SEMICONDUCTOR LASER MODULE
摘要 PURPOSE:To select long-life semiconductor laser modules with high accuracy by measuring initial characteristics regarding the temperature characteristics of predetermined optical output driving currents using the ambient temperature of the laser modules as parameters. CONSTITUTION:A laser module using a semiconductor laser having the same structure is employed as an object, the ambient temperature dependence of predetermined optical output driving currents is measured as inital characteristics, and the histogram of a critical temperature TaM where operating currents suddenly increase when an atmospheric temperature Ta is elevated gradually is prepared. A means value and standard deviation are calculated, and an element having TaM distributing while being deviated only by a fixed value or more such as sigma or 2sigma from the mean value is removed, thus screening a defective element without a conduction test.
申请公布号 JPS60144986(A) 申请公布日期 1985.07.31
申请号 JP19840000820 申请日期 1984.01.09
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 NAKANO YOSHINORI;MATSUMOTO TADASHI
分类号 H01L21/66;H01S5/00 主分类号 H01L21/66
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