| 摘要 |
PURPOSE:To improve quantum efficiency, and to increase the speed of response sy mounting a reflecting article on the back of a pellet. CONSTITUTION:A pellet layer is thinned only by a section corresponding to an operating region 15 except a depletion layer in an N<-> type semiconductor region 12 and a substance reflecting incident beams 16 having a wavelength used in a photodiode such as a reflecting article using Au as an electrode metal is fitted under an N<+> type semiconductor region 11, and incident beams 16 are reflected. Since the operating region 15 except the depletion layer is removed, the depletion layer 14 extends over the whole of the N<-> type semiconductor region 12, and incident beams 16 are projected into the depletion layer 14 again as reflected beams 26 by a reflecting plate 21. Accordingly, the state in which the depletion layer effectively extends over the whole of the N<-> type semiconductor region 12 even by a non-bias or a low bias is brought about, and it is expected that quantum efficiency is improved and the speed of response is increased. |
