METHOD OF RECORDING INFORMATION IN DUAL-GATE METALLINSULATOR-SEMICONDUCTOR-P-N-STRUCTURE WITH DIELECTRIC WITH CHARGE TRAPPING,申请号SU19843708107-传众专利搜索

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发明名称	METHOD OF RECORDING INFORMATION IN DUAL-GATE METALLINSULATOR-SEMICONDUCTOR-P-N-STRUCTURE WITH DIELECTRIC WITH CHARGE TRAPPING
摘要
申请公布号	SU1170509(A1)	申请公布日期	1985.07.30
申请号	SU19843708107	申请日期	1984.02.27
申请人	FIZICHESKIJ I IM.P.N.LEBEDEVA	发明人	PLOTNIKOV ANATOLIJ F,SU;SELEZNEV VLADIMIR N,SU;SAGITOV RINAT G,SU
分类号	G11C11/42;(IPC1-7):G11C11/42	主分类号	G11C11/42
代理机构		代理人
主权项
地址

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