CORRECTING METHOD FOR ACTIVE-MATRIX SUBSTRATE

摘要

PURPOSE:To enable correction simply by dropping an etching liquid for a gate electrode metal onto a thin-film field-effect transistor having a cross-leakage, applying predetermined voltage between gate and source electrodes and electrolytically etching the gate electrode. CONSTITUTION:An etching liquid 4 for chromium consisting of ceric nitrate- ammonium and perchloric acid is dropped onto a thin-film field-effect transistor having a cross-leakage, and DC voltage is applied between a gate wiring 2 and a source wiring 1 by a DC power supply 5, thus electrolytically etching a gate electrode. Accordingly, the defects of a substrate can be removed and the yield is improved.