发明名称 PROGRAMMABLE SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To reduce the emitter area of the output transistor of a reading word line driver and to improve the word line access speed at the time of reading by providing the word line driver exclusive for writing independently from the reading word line driver. CONSTITUTION:When an output O1 is selected and it becomes the high level, an output transistor Tw1 inside a writing word line driver DW is conducted, and the writing current is led-in from a bit line BL to the output transistor Tw1 when the bit line BL is selected. Since collecters of output transistors TR1- TRm have high impedance, the writing current is not led into a reading word line driver DR0. Since the output transistors TR1-TRm inside the reading word line driver DR0 do not absorb the writing current and they just absorb only the reading current, smaller emitter area can be obtained, and the access speed for the word line at the time of reading is improved.</p>
申请公布号 JPS60143500(A) 申请公布日期 1985.07.29
申请号 JP19830247702 申请日期 1983.12.29
申请人 FUJITSU KK 发明人 FUKUMOTO TOSHIO
分类号 G11C17/08;G11C17/00;G11C17/18;(IPC1-7):G11C17/00 主分类号 G11C17/08
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