| 摘要 |
PURPOSE:To enable to flatten the surface of a semiconductor device and to prevent a crack from generating therein by a method wherein an insulating layer, which is laminated on an n- th conductive layer, is formed into a laminated constitution consisting of an organic resin film having a smaller thermal expansion coefficient than that of the number-n conductive layer and an inorganic insulating film. CONSTITUTION:A phosphorus glass film 2 is formed on the surface of a semiconductor substrate 1, and after that, a first conductive layer 3 is made to adhere thereon in a prescribed thickness. Then, a low-thermal expansion polyimide 4, which is to be used as an organic resin film, is formed in a prescribed thickness. Here, the thermal expansion coefficient of the low- thermal expansion polyimide 4 is smaller than that of the first conductive layer 3. The thickness of the polyimide 4 is selected in such a way as to erase the step difference of the surface thereof in a degree that the roughness of the surface thereof doesn't affect a bad influence on a second-layer wiring forming process, which is to be performed later. An inorganic insulating film 5 is laminated on the whole surface. At this time, there is such a thing that a crack or a stripping generates and the effect of moisture-proof protection of the semiconductor device is damaged, because the low-thermal expansion polyimide 4 has been used. After through holes 6 were formed, the lamination of a second conductive layer 7 is performed. |
