| 摘要 |
PURPOSE:To make the activating current small and to contrive to simplify the manufacturing process by a method wherein resists which were used when mesa stripes were formed, are used leaving intact as a mask for forming an oxide film. CONSTITUTION:In order to have double hetero connections on a p-PbTe base plate 1, three layers of p-PbTe layer 2, p-Pb1-XSnxTe layer 3, and n-PbTe layer 4 are formed one after another. Subsequently, photoresist is painted on the n- PbTe layer 4, and the patterning is performed to form mesa stripes. The width of the p-Pb1-XSnxTe layer 3 is made about 5mum and the mesa etching is carried out by making this photoresist 5 as a mask, and mixing Br and HBr as etchant. Subsequently, an anodized film 6 is formed at the exposed surface of the n-PbTe layer 2 making the photoresist 5 as a mask, and after the photoresist 5 is removed, for instance, an Au electrode 7 is formed on the exposed surface by deposition. |
