发明名称 PLASMA CVD DEVICE
摘要 PURPOSE:To enable growth of uniform films on a large quantity of wafers at one time by forming a parallel electrode to which high-frequency electric power is impressed into a polygonal columnar shape and providing the 2nd electrode so as to enclose the 1st electrode holding the many wafers. CONSTITUTION:The 2nd polygonal columnar electrode 12 of which the respective faces face parallel the respective opposing outside surfaces of the 1st polygonal columnar electrode 11 provided with holding parts for many wafers 3 on the multiple faces and heating means 15 and which is provided with many holes for supplying reactive gas on the inside surface encloses the electrode 11. An evacuating port 18 enclosing the electrode 11 and an evacuating means 17 communicating therewith are provided below the space where the electrodes 11 and 12 face each other and a means for impressing high-frequency electric power 14 between the electrodes 11 and 12 is provided. The electrode 11 and the port 18 are provided on the body 21 side of the device and the electrode 12 is removable from the body 21. A reactive gas 19 is supplied through an introducing port 16 along the electrode 12 and toward the wafers 3 through holes 13.
申请公布号 JPS60141871(A) 申请公布日期 1985.07.26
申请号 JP19830249229 申请日期 1983.12.28
申请人 FUJITSU KK 发明人 TABUCHI AKIRA
分类号 H01J37/32;C23C16/50;C23C16/509 主分类号 H01J37/32
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