| 摘要 |
PURPOSE:To facilitate flattening of the surface of a coating film by rendering the inclination of the side faces of a pattern gentle, utilizing the fact that, in the etching method with acceleration particles, a part of the etched material is readhered to the mask pattern or the material to be etched. CONSTITUTION:An NiFe layer A is superposed on a non-magnetic garnet substrate 1, a photoresist pattern B is provided thereon, and a coating film C of Au having a larger etching rate than the photoresist B is vapor deposited on B at a low temperature so as to prevent the deformation of B. The Au film C and the NiFe layer A are ion trimmed with Ar. In the stage where the film C on the layer A is removed, the material of the film C, Au is readhered on the side faces of the mask pattern B. By further continuing the ion trimming in the vertical direction, the layer A is provided with a pattern AP. When the mask pattern B is removed, the pattern AP has a profile of two steps structure consisting of sections A1 and A2. Since the inclination is made gentle by the presence of the pattern A1, it becomes easy to flatten the surface by applying resin or the like. In such a manner, the pattern is enabled to have side faces inclined by 45-50 deg.. |
