| 摘要 |
PURPOSE:To obtain a device, in which a blooming and a smear are not generated, by depleting a region just under a photodiode region by applying bias voltage and flowing out only excess charges in photoelectric conversion signal charges in the region just under the photodiode region in the direction of a semiconductor substrate in a solid- state image pickup device having a second conduction type region as a charge tansfer region for a CCD and a first conduction type region as the photodiode region on the semiconductor substrate. CONSTITUTION:A P<-> type layer 34 is formed on an N type semiconductor substrate 30, mutually isolated P type regions 35 are diffused and shaped to the layer 34, and an N<-> type layer 36 is grown on the whole surface containing the regions 35 in an epitaxial manner. The layer 36 is formed to an insular shape by thick field oxide films 41 using P<+> type channel stop regions 42 as underlays, an N type region 37 as a charge transfer region for a CCD and an N<+> type region 44 as a photodiode region are shaped to the insular layer 36, and these regions 37 and 44 are connected by a lead region 38 for transferring sigal charges. The whole surface is coated with a gate oxide film 39 and an opening is bored, an Mo electrode 45 is formed in the region 44 while being surrounded by a PSG film 43, and a gate electrode 40 is applied on the region 37 through the film 39 and coated similarly with the film 43. |
