| 摘要 |
PURPOSE:To dissolve a trouble according to deposition of solid phase epitaxial Si at manufacture of a semiconductor device by a method wherein a thin aluminum layer is formed previously as a part of an aluminum wiring process, and impurities are implanted thereto to form the aluminum layer as to an N type to negate resistance by neutralizing P type solid phase epitaxial Si to be deposited later at heating time. CONSTITUTION:After a contact hole is formed in an insulating film 2 on a silicon substrate 1, a first aluminum layer 4 is adhered according to the sputtering method, for example. Then impurities are doped according to ion implantation to obtain an N type impurity doped first aluminum layer 4'. Aluminum containing silicon is sputtered to obtain a second aluminum layer 5. Then heat treatment is performed to obtain ohmic contact at the N type region. At this time, solid phase epitaxial Si is deposited as shown with mark P in the figure, while the solid phase epitaxial Si is compensated to be converted into the N type according to action of the already formed N type impurity doped first aluminum layer 4', and formation of a rectifying barrier or P-N junction is not brought. |
