发明名称 Semiconductor nonvolatile read only memory device
摘要 A semiconductor nonvolatile read only memory device has a voltage applying circuit which sets all word lines at ground potential in a stand-by mode and sets only a selected word line at a high level in an active mode. The word lines are connected to the gates of semiconductor nonvolatile memory transistors. Each of the memory transistors has the source (or drain) grounded and the drain (or source) connected to output lines. In a stand-by mode, the voltage applying circuit keeps all the word lines at ground potential. In an active mode, the voltage applying circuit applies a high level voltage only to the selected word line. The memory transistor connected to the selected word line produces data of "0" or "1" to the output line.
申请公布号 US4531202(A) 申请公布日期 1985.07.23
申请号 US19820344049 申请日期 1982.01.29
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 WATANABE, SHIGEYOSHI;TANAKA, SUMIO
分类号 G11C17/00;G11C16/06;G11C16/08;(IPC1-7):G11C11/40 主分类号 G11C17/00
代理机构 代理人
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