发明名称 METHOD FOR ATTACHING TARGET IN SPUTTERING
摘要 PURPOSE:To sputter only the substance of a target when the target is subjected to high frequency sputtering, by covering the periphery of the target with a retainer and putting a shield plate over the periphery of the retainer so that it contacts with the surface of the target. CONSTITUTION:The periphery of an insulator target 10 made of Al2O3 or the like is covered with a retainer 20, and a shield plate 40 is put over the periphery of the retainer 20 so that it contacts with the surface of the target 10. The target 10 is then subjected to high frequency sputtering. By attaching the target 10 as mentioned above, only the substance of the target is sputtered.
申请公布号 JPS60135571(A) 申请公布日期 1985.07.18
申请号 JP19830242674 申请日期 1983.12.21
申请人 SHIMAZU SEISAKUSHO KK 发明人 IKUJI NOZOMI;UEDA EISUKE
分类号 C23C14/34;H01J37/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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