| 摘要 |
PURPOSE:To obtain a high resistance value by a small area, and to improve the degree of integration of an IC by using an amorphous semiconductor film or the surface channel layer of said semiconductor film as a resistor when the resistor is formed to the IC. CONSTITUTION:A drain diffusion region 3 and a source diffusion region 4 as an active MOSFET are formed to the surface of a semiconductor substrate 1, and a gate electrode 6 is applied between these regions through a gate oxide film 5. A load resistor 7 consisting of an amorphous semiconductor film 7 is formed on a field oxide film 2 surrounding these regions 3, 4 and electrode 6 and oxide film 5, the semiconductor film 7 is coated with an inter-layer insulating film 8, openings are bored made to correspond to the regions 3, 4, the electrode 6 and further the film 7, and Al electrodes 9 are each formed to these regions 3, 4 electrode 6 and film 7. Accordingly, an amorphous semiconductor, carrier mobility thereof is lower than a polycrystalline semiconductor by one figure or two figures or more, is used as the resistor, and a high resistance value is obtained by a small area. |
