发明名称 |
Permeable base transistor |
摘要 |
A vertical channel field effect transistor is disclosed which has a specialized grid structure in order to improve the characteristics. The improved field effect transistor utilizes an arrangement of two sets of parallel teeth which intersect to form a mesh-like structure in order to produce conduction filaments. The device is particularly applicable to field effect transistor structures which have two-grid transistors.
|
申请公布号 |
US4529997(A) |
申请公布日期 |
1985.07.16 |
申请号 |
US19820417591 |
申请日期 |
1982.09.13 |
申请人 |
THOMSON-CSF |
发明人 |
JAY, PAUL R.;RUMELHARD, CHRISTIAN |
分类号 |
H01L29/80;H01L21/331;H01L29/423;H01L29/73;H01L29/772;(IPC1-7):H01L29/80;H01L23/48 |
主分类号 |
H01L29/80 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|