PHASE-LOCKED SEMICONDUCTOR LASER DEVICE

摘要

: A semiconductor laser device has a semiconductor substrate and a semiconductor assembly for optical confinement which includes an active layer and cladding layers. A first electrode is disposed on this semiconductor assembly, a second electrode is disposed on the substrate side, and layers are provided to constitute an optical resonator. The invention is characterized in that a plurality of regions which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting a traveling direction of the laser beam are discretely disposed over or under said active layer, local emissions of adjacent lasers giving rise to a nonlinear interaction therebetween. The result is a phase-locked semiconductor laser device of high quality and high optical output.