发明名称 LIGHT EMITTING SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase the luminous output and to enable the optimization of integrity with optical fibers by providing a junction region for current stricture on the side of a solid surface and arranging a spherical lens in a light emitting window which is opened in said region and is formed into a funnel shape having an inclination in a circumferential end plane. CONSTITUTION:Double hetero structures are continuously formed in order on an N type GaAs substrate 1 by epitaxial growth technique. Among those layeres, an aluminum asrenide (AlAs) mixed crystal ratio (X) in a GaAlAs layer is 0.24 in an N type GaAlAs layer 2 and is 0.35 in a P type GaAlAs layer 4. Furthermore, in an N type GaAlAs layer 5 of a current narrowing junction region 5, (X) is predetermined to be 0.15 with considering the luminous absorption property and connection property with an electrode 7. Next, a recess is formed on the N type GaAlAs layer 5 by etching of photolithography. Further, a p<+> layer 6 is formed and a circular window is arranged with said etching recess as the center on the electrode layer 7 to be formed on the P layer 6. This part is made as a luminous plane and a minute glass spherical lens 9 is stuck to be fixed with a transparent epoxy resin 10.
申请公布号 JPS60130873(A) 申请公布日期 1985.07.12
申请号 JP19830239243 申请日期 1983.12.19
申请人 MATSUSHITA DENKI SANGYO KK 发明人 NAGAO SHIGERU;FURUIKE SUSUMU
分类号 H01L33/14;H01L33/30;H01L33/58 主分类号 H01L33/14
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