| 摘要 |
PURPOSE:To prevent the generation of voids which would otherwise become gaps between the back of an element end and a substrate by a method wherein, in fixing a semiconductor element on the semiconductor element supporting substrate via Al-Si alloy and the like, using an Mo plate of relatively small diameter as the supporting substrate, its outer periphery is surrounded by a ringform polycrystalline Si frame. CONSTITUTION:A thyristor element 2 having the PNPN junction is adhered on the semiconductor element supporting substrate 10 made of Mo or the like with an Al-Si alloy thin film 3. Next, the side surface of the element 2 is etched with the mixed solution of nitric acid and hydrofluoric acid, thus producing an incline surface 2a in a bevel form. Thereafter, the uppermost layer of the element 2 is provided with a gate electrode 5 at the center, and an anode 4 is formed around it. In this construction, the substrate 10 is not made up of a single plate, but made up of a composite substrate by fitting a polycrystalline Si ring-form frame 7 in the outer periphery of the Mo plate 10 of relatively small diameter corresponding to the anode 4 via Al thin film 30. Such a manner does not allow an etchant to infiltrate into the end back of the element 2 at the time of bevel etching, thus preventing the generation of voids thereon. |
