| 摘要 |
PURPOSE:To inhibit the spreading of a noble metallic layer and reduce its consumed amount markedly by a method wherein, in plating a lead frame only in the region of wire bonding with a noble metal, the minus side of a DC power source is connected to the frame, plating liquid being dripped down to a bonding region from the tip of a metallic capillary, which is at the same time irradiated with laser beams. CONSTITUTION:An island part 2, a semiconductor chip mounting part constituting the lead frame 1, is held by hang leads 5, and noble metallic plating layers 4 are formed at the tips of many inner leads positioned around the island part 2. At this time, the metallic capillary 7 is arranged on top of the layer 4 forming part 6 of the tip 3, and is connected to the minus side of the DC power source, and the plus side is connected to the lead tip 3. Thereafter, the plating liquid is dripped down to the layer 4 from the tip of the capillary 7, which layer is at the same time irradiated with laser beams stopped down from a laser oscillation device 8, resulting in the reduction in the consumed amount of plating liquid. |
