| 摘要 |
PURPOSE:To produce a resistor with less temperature coefficient by a method wherein an impurity introducing layer and a polycrystalline layer are combined to be connected in a semiconductor substrate. CONSTITUTION:A P type diffusion layer 2 as an impurity layer is formed on an N type epitaxial layer deposited on a substrate 1. A silicon oxide film 3 and a silicon nitride film 4 are successively laminated on the semiconductor substrate 1. Next the silicon nitride film 4 and the silicon oxide film 3 are provided with contact holes 5, 6 at both ends of the diffusion layer 2 to expose the surface of the layer 2. The overall surface of the semiconductor substrate 1 is coated with a polysilicon film 7 as a polycrystalline semiconductor layer and the parts excluding a resistor forming part are oxidized to form a polysilicon oxide film 7a. Moreover the polysilicon oxide film 7a is coated with another silicon oxide film 8 to be provided with the other contact holes upon the contact holes 5, 6 and then aluminum electrodes 9, 10 may be formed to complete a composite resistor connecting diffusion resistor with polysilicon resistor in parallel. |
