| 摘要 |
PURPOSE:To improve the operational time efficiency and reliability as well as the density of integration by a method wherein an insulating film is formed between a semiconductor region utilized as a source region or a drain region of an MISFET and a conductor layer connected to the semiconductor region while connecting holes for connecting them with one another are selfmatchingly formed with a gate electrode. CONSTITUTION:An insulating film 6 is formed so as to cover the side of a gate electrode 3 which is able to cover insulating films 4, 6 selfmatchingly. The other insulating films (stopper layer) 8 and 9 are formed on the upper part of the insulating films 4, 6 and a semiconductor region 7. The insulating film 9 on the upper part of the specified semiconductor region 7 is selectively removed to form a connecting hole 10. Then the insulating film 8 is selectively removed to expose the main surface of the semiconductor region 7 forming another connecting hole 11. The other connecting hole 11A may be formed selfmatchingly with the gate electrode 3 to be electrically disconnected from a conductive layer 12. The electrode 3 may be electrically connected to the semiconductor region 7 through the intermediary of the connecting holes 10, 11 to form the conductive layer 12 extending over the upper part of the almost flattened insulating film 9. |
