| 摘要 |
PURPOSE:To obtaon a semiconductor device adapted for a high speed in a thin layer by spin coating a silica film which contains an impurity, and uniformly forming the thickness of the film at the periphery of a hole and a flat portion, thereby uniformly forming a diffusing depth. CONSTITUTION:After an Si3N4 film 102 is formed on the prescribed region on a P type substrate 101 and an oxide film 103 is selectively formed by heat treating, the film 102 is removed, a silica film 104 which includes As is spin coated, and a buried region 105 is formed by a heat treating. After the films 104 and 103 are removed, an epitaxial layer 106 is formed, the center and the end of the region 105 and the top of the substrate 101 are buried, insulated and separated by an oxide film 107 and a polysilicon 108, an N type collector wall 109, a P type base 110, and a P type emitter 111 are formed on an epitaxial layer region which has the region 105 to form an N-P-N type transistor, a P type collector wall 112, an N type base 113 and a P type emitter 114 are formed on the epitaxial layer on the substrate to manufacture a P-N-P type transistor. |
